BSC150N03LD G
OptiMOS™3 Power-Transistors
Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS
• Op...
BSC150N03LD G
OptiMOS™3 Power-
Transistors
Features Dual N-channel, logic level Fast switching MOSFETs for SMPS
Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21
Product Summary
V DS R DS(on),max ID
30 15 20 PG-TDSON-8
V mΩ A
Type BSC150N03LD G
Package PG-TDSON-8
Marking 150N03LD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
Value
Unit
≤10 secs steady state
20 A
V GS=10 V, T C=100 °C
20
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=10 V, T A=25 °C3)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25 Ω
Gate source voltage
V G...
