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CS3410B4 Dataheets PDF



Part Number CS3410B4
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS3410B4 DatasheetCS3410B4 Datasheet (PDF)

Silicon N-Channel Power MOSFET CS3410 B4 ○R General Description: CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(R.

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Silicon N-Channel Power MOSFET CS3410 B4 ○R General Description: CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤0.1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test Applications: Circuit of switching DC/DC converters and DC motor control. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Si.


CS3410BR CS3410B4 CS60N06C4


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