Silicon N-Channel Power MOSFET
CS25N06 B8
○R
General Description：
CS25N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
60 25 50 28
performance and enhance the avalanche energy. The transistor
can be used in various power ...
