Silicon N-Channel Power MOSFET
CS90N03 B3
○R
General Description：
CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs...
Silicon N-Channel Power MOSFET
CS90N03 B3
○R
General Description：
CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
25 90 80 4.8
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The
package form is TO-251, which accords with the RoHS
standard.
Features：
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive,DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
I
D
a1
M
VGS
EAS a2 EAR a1 IAR a1 dv/dt a3
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100...
