Silicon N-Channel Power MOSFET
CS3710 B8
○R
General Description:
CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ...
Silicon N-Channel Power MOSFET
CS3710 B8
○R
General Description:
CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and
VDSS ID PD(TC=25℃) RDS(ON)Typ
100 57 200 14
enhance the avalanche energy. The
transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤14 mΩ) l Low Gate Charge (Typical Data:72nC) l Low Reverse transfer capacitances(Typical:32pF) l 100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °...