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CSZ44V-1

Huajing Microelectronics

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CSZ44V-1 ○R General Description: CSZ44V-1, the silicon N-channel Enhanced VDMOSFETs, ...


Huajing Microelectronics

CSZ44V-1

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Description
Silicon N-Channel Power MOSFET CSZ44V-1 ○R General Description: CSZ44V-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanc...




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