Silicon N-Channel Power MOSFET
CS24N50 ANHD
○R
General Description：
CS24N50 ANHD, the silicon N-channel Enhanced VDMOS...
Silicon N-Channel Power MOSFET
CS24N50 ANHD
○R
General Description：
CS24N50 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 24 230 0.18
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain C...
