Silicon N-Channel Power MOSFET
CS3N50 B4
○R
General Description:
VDSS
500 V
CS3N50 B4, the silicon N-channel Enhanc...
Silicon N-Channel Power MOSFET
CS3N50 B4
○R
General Description:
VDSS
500 V
CS3N50 B4, the silicon N-channel Enhanced
ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)
2.5 Ω
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:9.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current ...