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CS13N50A8R Dataheets PDF



Part Number CS13N50A8R
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS13N50A8R DatasheetCS13N50A8R Datasheet (PDF)

Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description: CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching VDSS ID PD(TC=25℃) R.

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description: CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 13 150 0.4 l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-.


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