CS2N80A3HY

Silicon N-Channel Power MOSFET CS2N80 A3HY ○R General Description： VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features： l Fast Switching l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:4.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 IAS a2 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source...