Silicon N-Channel Power MOSFET
CS7N70 ARD
○R
General Description：
CS7N70 ARD, the silicon N-channel Enhanced VDMOSFET...
Silicon N-Channel Power MOSFET
CS7N70 ARD
○R
General Description：
CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The
transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-262, which accords with the
RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse A...
