Silicon N-Channel Power MOSFET
CS6N70F B9D
○R
General Description:
CS6N70F B9D, the silicon N-channel Enhanced VDMOSFE...
Silicon N-Channel Power MOSFET
CS6N70F B9D
○R
General Description:
CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
700 6 35 1.4
the avalanche energy. The
transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS
standard.
Features:
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pul...