Silicon N-Channel Power MOSFET
CS3N70 A3H-G
○R
General Description：
VDSS
700 V
CS3N70 A3H-G the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.8 Ω
performance and enhance the avalanche energy. The transistor
can be used...
