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CS7N65FA9TDY Dataheets PDF



Part Number CS7N65FA9TDY
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS7N65FA9TDY DatasheetCS7N65FA9TDY Datasheet (PDF)

Silicon N-Channel Power MOSFET CS7N65F A9TDY ○R General Description: CS7N65F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 40 1.1 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standa.

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Silicon N-Channel Power MOSFET CS7N65F A9TDY ○R General Description: CS7N65F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 40 1.1 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C.


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