CS2N65FA9HY

Silicon N-Channel Power MOSFET CS2N65F A9HY ○R General Description： CS2N65F A9HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 2.0 27 4 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Puls...