CS1N65A1

Silicon N-Channel Power MOSFET CS1N65 A1 ○R General Description： VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 13.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C...