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CS4N60A8HD Dataheets PDF



Part Number CS4N60A8HD
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS4N60A8HD DatasheetCS4N60A8HD Datasheet (PDF)

Silicon N-Channel Power MOSFET CS4N60 A8HD ○R General Description: CS4N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved.

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Silicon N-Channel Power MOSFET CS4N60 A8HD ○R General Description: CS4N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single P.


CS4N60ARRD CS4N60A8HD CS4N60A7HD


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