Silicon N-Channel Power MOSFET CS4N60 A7HD
○R
General Description：
CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFE...
Silicon N-Channel Power MOSFET CS4N60 A7HD
○R
General Description：
CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-126F,
which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test
600 V 4A 30 W 1.8 Ω
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100...
