Silicon N-Channel Power MOSFET CS2N60 A4H
○R
General Description:
VDSS
600 V
CS2N60 A4H, the silicon N-channel Enha...
Silicon N-Channel Power MOSFET CS2N60 A4H
○R
General Description:
VDSS
600 V
CS2N60 A4H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.6 Ω
performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard..
Features:
l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 ...