CS13N50A8H

Silicon N-Channel Power MOSFET CS13N50 A8H ○R General Description： VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Curre...