Silicon N-Channel Power MOSFET
CS3N50 B3HY
○R
General Description:
VDSS
500 V
CS3N50 B3HY, the silicon N-channel En...
Silicon N-Channel Power MOSFET
CS3N50 B3HY
○R
General Description:
VDSS
500 V
CS3N50 B3HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
2.4 Ω
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-251, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Curren...