Silicon N-Channel Power MOSFET
CS630 A4H
○R
General Description：
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, ...
Silicon N-Channel Power MOSFET
CS630 A4H
○R
General Description：
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.23
the avalanche energy. The
transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords with
the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C ...
