Silicon FS Planar IGBT
Silicon FS Planar IGBT
BT40N60BNF
○R
General Description:
Using HUAJING's proprietary Planar design and advanced FS te...
Description
Silicon FS Planar IGBT
BT40N60BNF
○R
General Description:
Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot (TC=25℃)
VCE(SAT)
600 40 312 2.2
V A W V
Features:
l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V
@ IC = 40A and TC = 25°C l Extremely enhanced avalanche capability
Applications:
Aircondition、Welding、UPS…
Absolute Maximum Ratings
(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
IC
ICMa1 IF
Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C
IFM Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
PD
Power Dissipation @TC = 100 °C
TJ,Tstg Operating Junction and Storage Temperatur...
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