AUIRF1324L

  AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L Features  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.3m 1.65m 340A 195A DD S G D2Pak AUIRF1324S G Gate S D G TO-262 AUIRF1324L D Drain S Source Ba...