Power MOSFET
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fas...
Description
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
VDSS RDS(on)
typ. max.
ID (Silicon Limited) ID (Package Limited)
D
AUIRF3805 AUIRF3805S AUIRF3805L
55V 2.6m 3.3m 210A 160A
D
GDS
TO-220AB AUIRF3805
G Gate
S G
D2Pak AUIRF3805S
D Drain
S GD
TO-262 AUIRF3805L
S Source
Base part number
A...
Similar Datasheet