AUIRF3805S

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D AUIRF3805 AUIRF3805S AUIRF3805L 55V 2.6m 3.3m 210A 160A D GDS TO-220AB AUIRF3805 G Gate S G D2Pak AUIRF3805S D Drain S GD TO-262 AUIRF3805L S Source Base part number A...