AUIRF4104

AUTOMOTIVE GRADE AUIRF4104 AUIRF4104S Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 4.3m 5.5m 120A 75A D G Gate GDS TO-220AB AUIRF4104 D Drain S G D2Pak AUIRF4104S S Source Base part number AUIRF4104 AUIRF4104S Package Type TO-220 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRF4104 AUIRF4104S AUIRF4104STRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for ...