AUIRF7478Q

  AUTOMOTIVE GRADE AUIRF7478Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS RDS(on) typ. max. ID 60V 20m 26m 7.0A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. SO-8 AUIRF7478Q G Gate D Drain S Source Base part number AUIRF7478Q Package Type SO-8 Standard Pack Form Quantity Tape and Reel ...