AUIRFB4610

  AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 Features  Advanced Process Technology  Ultra Low On-Resistance  Enhanced dV/dT and dI/dT capability  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications HEXFET® Power MOSFET VDSS 100V RDS(on) typ. 11m max. 14m ID 73A D D GDS TO-220 AUIRFB4610 S G D2Pak AUIRFS4610 G Gate D Drain S Source Base part number AUIRFB4610 AUIRFS4...