AUIRFP4310Z

  AUTOMOTIVE GRADE AUIRFP4310Z Features  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)   100V 4.8m 6.0m 128A 120A D  G Gate D Drain GDS TO-247AC S Source Base Part Number AUIRFP4310Z Package Type TO-247AC Standard Pack Form...