Document
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRFR2905Z
VDSS RDS(on)
typ. max.
ID (Silicon Limited) ID (Package Limited)
55V 11.1m 14.5m 59A
42A
D
G Gate
S G
D-Pak AUIRFR2905Z
D Drain
S Source
Base part number AUIRFR2905Z
Package Type D-Pak
Standard Pack
Form
Quantity
.