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AUIRFR2905Z Dataheets PDF



Part Number AUIRFR2905Z
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet AUIRFR2905Z DatasheetAUIRFR2905Z Datasheet (PDF)

AUTOMOTIVE GRADE   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, f.

  AUIRFR2905Z   AUIRFR2905Z


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AUTOMOTIVE GRADE   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRFR2905Z VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 55V 11.1m 14.5m 59A 42A D G Gate S G D-Pak AUIRFR2905Z D Drain S Source Base part number AUIRFR2905Z Package Type D-Pak Standard Pack Form Quantity .


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