HFP13N10

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. █ Features 13A, 100V, RDS(on) <0.10Ω@VGS = 10 V High density cell design for ultra low Rdson Fast switching 100% avalanche tested Improved dv/dt capability █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220 1- G 2- D 3- S Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Tempera...