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HGH25N120A Dataheets PDF



Part Number HGH25N120A
Manufacturers HUASHAN ELECTRONIC
Logo HUASHAN ELECTRONIC
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet HGH25N120A DatasheetHGH25N120A Datasheet (PDF)

N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A █ Applications • Induction heating and Microwave oven • Soft switching applications █ Features TO-3P • Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V • High input impedance • Field stop trench technology offer superior conduction and switching performances, • High speed switching █ Absolute Maximum Ratings 1―Gate,G 2―Collector,C 3―Emitter,E Symbol VCES VGES IC Description Collector to Emitter Voltage Gate to Emitter Vo.

  HGH25N120A   HGH25N120A


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