Schottky Rectifier. 11DQ09 Datasheet

11DQ09 Rectifier. Datasheet pdf. Equivalent


Vishay 11DQ09
11DQ09, 11DQ10
Vishay High Power Products
Schottky Rectifier, 1.1 A
DO-204AL
Cathode
Anode
PRODUCT SUMMARY
IF(AV)
VR
1.1 A
90/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 µs sine
VF 1 Apk, TJ = 25 °C
TJ Range
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The 11DQ.. axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
VALUES
1.1
90/100
85
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
11DQ09
90
11DQ10
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 75 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.1
85
14
1.0
0.5
UNITS
A
mJ
A
Document Number: 93207
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1


11DQ09 Datasheet
Recommendation 11DQ09 Datasheet
Part 11DQ09
Description Schottky Rectifier
Feature 11DQ09; 11DQ09, 11DQ10 Vishay High Power Products Schottky Rectifier, 1.1 A DO-204AL Cathode Anode PRODU.
Manufacture Vishay
Datasheet
Download 11DQ09 Datasheet




Vishay 11DQ09
11DQ09, 11DQ10
Vishay High Power Products Schottky Rectifier, 1.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.85
0.96
0.68
0.78
0.5
1.0
35
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Without cooling fin
Typical thermal resistance,
junction to lead
RthJL
DC operation
See fig. 4
Approximate weight
Marking device
Case style DO-204AL (DO-41)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 40 to 150
UNITS
°C
100
°C/W
81
0.33 g
0.012
oz.
11DQ09
11DQ10
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93207
Revision: 06-Nov-08



Vishay 11DQ09
11DQ09, 11DQ10
Schottky Rectifier, 1.1 A Vishay High Power Products
10 100
TJ = 25˚C
TJ = 150˚C
TJ = 125˚C
1
TJ = 25˚C
10
0 20 40 60 80 100
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
120
DC
90
0.1
0
0.4 0.8 1.2 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
60
Square wave (D = 0.50)
80% Rated VR applied
30
see note (1)
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV)(A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current
10
1 TJ = 150˚C
0.1
0.01
125˚C
0.001
0.0001
25˚C
0.8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
0.6 D = 0.75
RMS Limit
0.4
0.2
DC
0
0 20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93207
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3





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