CD22100

T UCT ROD ACEMEN 47 P E Semiconductor 7 T L 7 E P 42 OL RE 00-4 m OBS ENDED 8 1 s.co MM ions ECO pplicat p@harri R O A N ral ntap Cent : ce Call or email CMOS 4 x 4 Crosspoint February 1999 CD22100 Switch with Control Memory High-Voltage Type (20V Rating) Features Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V “Built-In” Control Latches Large Analog Signal Capability . . . . . . . . . . . . . . . ±VDD/2 10MHz Switch Bandwidth Matched Switch Characteristics ∆RON = 18Ω (Typ) at VDD = 12V High Linearity - 0.5% Distortion (Typ) at f = 1kHz, VIN = 5VP-P, VDD = 10V, and RL = 1kΩ Standard CMOS Noise Immunity 100% Tested for Maximum Quiescent Current at 20V Description CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line address. The selected transmission gate can be turned on or off by applying a logic one or zero, respectively, to the data input and strobing the strobe input to a logic one. Any number of the transmission gates can be ON simultaneously. When the required operating power is applied to the CD22100, the states of the 16 switches are indeterminate. Therefore, all switches must be turned off by putting the strobe high and data in low, and then addressing all switches in succession. [ /Title (CD22 100) /Subject (CMO S4x4 Crosspoint Switch with Control Memory Hig...