Power MOSFET
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fas...
Description
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRFR2607Z
VDSS RDS(on)
typ. max.
ID (Silicon Limited) ID (Package Limited)
75V 17.6m 22m 45A
42A
D
G Gate
S G
D-Pak AUIRFR2607Z
D Drain
S Source
Base part number AUIRFR2607Z
Package Type D-Pak
Standard Pack
Form
Quantity
Tu...
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