AUIRFU9024N

  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS RDS(on) ID AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET -55V max. 0.175 -11A D D S G D-Pak AUIRFR9024N S GD I-Pak AUIRFU9024N G Gate D Drain S Source Base part number AUIRFU9024N AUIRFR9024N Package Type I-P...