AUIRFS4127

AUTOMOTIVE GRADE AUIRFS4127 AUIRFSL4127 Features  Advanced Process Technology  Ultra Low On-Resistance 175°C Operating Temperature Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.  D G S D HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 200V 18.6m 22m 72A D G Gate S G D2Pak AUIRFS4127 D Drain S D G TO-262 AUIRFSL4127 S Source Base part number AUIRFSL4127 AUIRFS4127 Package Type TO-262...