AUIRFS6535

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRFS6535 AUIRFSL6535 HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID 300V 148m 185m 19A D D S G D2Pak AUIRFS6535 S GD TO-262 AUIRFSL6535 G Gate D Drain S Source Base part number AUIRFSL6535 AUIRFS6535 Package Type TO-262 D2-Pak Standa...