Power MOSFET. AUIRL1404Z Datasheet

AUIRL1404Z MOSFET. Datasheet pdf. Equivalent

Part AUIRL1404Z
Description Power MOSFET
Feature   AUTOMOTIVE GRADE Features  Logic Level  Advanced Process Technology  Ultra Low On-Resistance .
Manufacture Infineon
Datasheet
Download AUIRL1404Z Datasheet

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS Featu AUIRL1404Z Datasheet
  AUTOMOTIVE GRADE Features  Logic Level  Advanced Proces AUIRL1404Z Datasheet
PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS Featu AUIRL1404ZL Datasheet
  AUTOMOTIVE GRADE Features  Logic Level  Advanced Proces AUIRL1404ZL Datasheet
PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS Featu AUIRL1404ZS Datasheet
  AUTOMOTIVE GRADE Features  Logic Level  Advanced Proces AUIRL1404ZS Datasheet
Recommendation Recommendation Datasheet AUIRL1404Z Datasheet




AUIRL1404Z
 
AUTOMOTIVE GRADE
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
HEXFET® Power MOSFET
VDSS
40V
RDS(on) typ.
2.5m
max.
3.1m
ID (Silicon Limited)
180A
ID (Package Limited)
160A
DD
GDS
TO-220AB
AUIRL1404Z
G
Gate
S
G
D2Pak
AUIRL1404ZS
D
Drain
S
GD
TO-262
AUIRL1404ZL
S
Source
Base part number Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRL1404Z
TO-220
Tube 50 AUIRL1404Z
AUIRL1404ZL
TO-262
Tube
50 AUIRL1404ZL
AUIRL1404ZS
D2-Pak
Tube
Tape and Reel Left
50
800
AUIRL1404ZS
AUIRL1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
180
130
160
790
200
1.3
± 16
190
490
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
 
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
1 2015-10-27



AUIRL1404Z
  AUIRL1404Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
40 ––– –––
––– 0.034 –––
––– 2.5 3.1
––– ––– 4.7
––– ––– 5.9
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A **
m VGS = 5.0V, ID = 40A 
VGS = 4.5V, ID = 40A 
VGS(th)
gfs
IDSS
IGSS
 
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.4 ––– 2.7
120 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 75A**
µA
VDS = 40V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =125°C
nA
 
VGS
VGS
=
=
16V
-16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
––– 75 110
––– 28 –––
––– 40 –––
––– 19 –––
––– 180 –––
––– 30 –––
––– 49 –––
––– 4.5 –––
––– 7.5 –––
ID = 75A**
nC   VDS = 32V
VGS = 5.0V
VDD = 20V
ns
ID = 75A**
RG= 4.0
VGS = 5.0V
Between lead,
nH
 
6mm
from
(0.25in.)
package
and center of die contact
Ciss Input Capacitance
Coss Output Capacitance
––– 5080 –––
––– 970 –––
VGS = 0V
VDS = 25V
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
––– 570 –––
––– 3310 –––
––– 870 –––
ƒ = 1.0MHz
pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
––– 1280 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
––– ––– 180
––– ––– 790
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– –––
––– 26
––– 18
1.3
39
27
V TJ = 25°C,IS = 75A**,VGS = 0V 
ns TJ = 25°C ,IF = 75A** , VDD = 20V
nC di/dt = 100A/µs 
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.066mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population 100% tested to this value in production.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994
TO-220Pak device will have an Rth value of 0.65°C/W.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current l
imitations arising from heating of the device leads may occur with some lead mounting arrangements.
** All AC and DC test conditions based on former package limited current of 75A.
2 2015-10-27





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)