Document
AUTOMOTIVE GRADE
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
VDSS RDS(on)
ID
D
AUIRLR024Z AUIRLU024Z
HEXFET® Power MOSFET
typ. max.
55V 46m 58m 16A
D
G Gate
S G
D-Pak AUIRLR024Z
D Drain
S GD I-Pak AUIRLU024Z
S Source
Base part number AUIRLU024Z AUIRLR024Z
Package Type I-Pak.