AUIRLS3034-7P

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRLS3034-7P HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.0m 1.4m 380A 240A   G Gate D2Pak 7 Pin AUIRLS3034-7P D Drain S Source Base ...