CD2810

1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445 SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION SILICON DIOXIDE PASSIVATED COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW CD2810 CD5711 CD5712 CD6857 CD6858 CD6916 MAXIMUM RATINGS Operating Temperature: -55°C to +125°C Storage Temperature: -65°C to +150°C 15 MILS 3 MILS BACKSIDE IS CATHODE FIGURE 1 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified CDI TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE (2) VBR @ 10 µ A VOLTS MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM REVERSE LEAKAGE CURRENT V MAXIMUM CAPACITANCE @ = 0 VOLTS R f = 1.0 MHZ CT FIGURE NUMBER VOLTS 0.41 0.41 0.41 0.35 0.36 VOLTS @ mA 1.0 @ 35 1.0 @15 1.0 @ 35 0.75 @ 35 0.65 @ 15 0.27 @ 0.1 nA 100 200 150 150 200 100 200 500 VOLTS 15 50 16 16 50 1 20 40 PICO FARADS 1.2 2.0 1.2 4.5 4.5 1 2 1 2 2 CD2810 CD5711 CD5712 CD6857 CD6858 20 70 20 20 70 15 MILS CD6916 40 (2) 0.34 0.34 @ 1.0 0.47 @ 10.0 5 2 BACKSIDE IS CATHODE FIGURE 2 NOTES: (1) Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds (2) CD6916 V BR measured @ 500 nanoamps DESIGN DATA METALLIZATION: Top: (Anode)...................... ..Al Back: (Cathode)................. Au o AL THICKNESS.................25,000 A Min o GOLD THICKNESS... ..........4,000 A Min CHIP THICKNESS............. .........10 Mils TOLERANCES: ALL Dimensions + ...