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BSC014NE2LSI Dataheets PDF



Part Number BSC014NE2LSI
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet BSC014NE2LSI DatasheetBSC014NE2LSI Datasheet (PDF)

OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC014NE2LSI Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 25 V 1.4 mW 100 A 25 nC 39 nC PG-TDSON-8 Type BSC014NE2LSI Package PG-TDSON-8 Marki.

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OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC014NE2LSI Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 25 V 1.4 mW 100 A 25 nC 39 nC PG-TDSON-8 Type BSC014NE2LSI Package PG-TDSON-8 Marking 014NE2LI Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C 100 A 100 100 V GS=4.5 V, T C=100 °C 94 V GS=10 V, T A=25 °C, R thJA=50 K/W2) 33 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 W 50 mJ Gate sou.


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