BSC018NE2LS

OptiMOSTM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS=4.5 V 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 BSC018NE2LS Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 25 V 1.8 mW 100 A 21 nC 39 nC PG-TDSON-8 Type BSC018NE2LS Package PG-TDSON-8 Marking 018NE2LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS V GS V GS=10 V, T A=25 °C, R thJA=50 K/W2) T C=25 °C T C=25 °C I D=50 A, R GS=25 W Value 100 97 100 86 29 400 50 80 ±...