Type
OptiMOSTM3 Power-Transistor
Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate ch...
Type
OptiMOSTM3 Power-
Transistor
Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
BSC16DN25NS3 G
Product Summary VDS RDS(on),max ID
250 V 165 mW 10.9 A
PG-TDSON-8
Type BSC16DN25NS3 G
Package PG-TDSON-8
Marking 16DN25NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C T C=25 °C
Avalanche energy, single pulse Reverse diode dv /dt
E AS dv /dt
I D=5.5 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) see figure 3
Value
10.9 7.7 44 120 10 ±...