IPD80R1K0CE

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R1K0CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 1Description CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features1) Highvoltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Pb-freeleadplating;RoHScomp1l)iant;halogenfreemoldcompound DPAK tab 2 1 3 IPAK tab 1 23 Drain Pin 2 Gate Pin 1 Source Pin 3 Benefits Increasedpowerdensitysolutionsduetosmallerpackage Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetolowoperatingtemperatures Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Table1KeyPerformanceParameters Parameter VDS @ Tj=25°C RDS(on),max Qg,typ ID,pulse VGS(th),typ CO(tr),typ Value 800 0.95 31 18 3 69 Unit V Ω nC A V pF Type/OrderingCode IPD80R1K0CE IPU80R1K0CE Package PG-TO 252 PG-TO 251 Marking 8R1K0CE RelatedLinks see A...