JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD112
TRANSISTOR (NPN)
...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate
Transistors
MJD112
TRANSISTOR (
NPN)
yFEATURES Complementary Darlington Power
Transistors Dpak for Surface Mount Applications
TO-251-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
2A
PC Collector Power Dissipation
1W
RθJC
Thermal resistance, junction to case
6.25 ℃/W
RθJA
Thermal resistance, junction to Ambient
71.4 ℃/W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current
D...