MMBTA63

MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TStg Value 30 30 10 500 200 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA at -VCE = 5 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA Symbol MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE hFE hFE hFE -ICBO -IEBO -V(BR)CEO -VCE(sat) -VBE(on) fT Min. 5000 10000 10000 20000 - - 30 - - 125 Max. - 100 100 - 1.5 2 - Unit - nA nA V V V MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTA63 / MMBTA64 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 ...