MRF581AG

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D P D Tstg Total Device Dissipation @ TC = 50ºC Derate above 50ºC Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Junction Temperature Range TJmax Maximum Junction Temperature Revision A- December 2008 2.5 25 1.25 10 -65 to +150 150 Microsemi reserves the right to change, without notice, the specifications and information contained herein V...